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70N03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 70N03

Тип транзистора: MOSFET

Полярность: N Basejump 1 3 2.

Максимальная рассеиваемая мощность (Pd): 68 W

Vellum 2 6 3 x 2. Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 70 A

Максимальная температура канала (Tj): 175 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm

Тип корпуса: TO251

70N03 Datasheet (PDF)

0.1. std70n03l-1 std70n03l-1 std70n03l.pdf Size:351K _st

STD70N03LSTD70N03L-1N-channel 30V - 0.0059 - 70A - DPAK / IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70N03L 30V

0.2. rxh070n03.pdf Size:1123K _rohm

Data Sheet4V Drive Nch MOSFETRXH070N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETSOP8(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (SOP8). (1) (4) ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TBBasic ordering unit (pieces

0.3. sup70n03-09bp sub70n03-09bp.pdf Size:73K _vishay

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

0.4. sum70n03-09cp.pdf Size:67K _vishay

SUM70N03-09CPVishay SiliconixN-Channel 30-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD Optimized for High- or Low-SideV(BR)DSS (V) rDS(on) (W) ID (A)D New Low Thermal Resistance Package0.0095 @ VGS = 20 V 70D 100% Rg Tested30300.014 @ VGS = 4.5 V 58APPLICATIONSD DC/DC ConvertersD Synchronous RectifiersDTO-263DRAIN connected to TAB

0.5. sup70n03-09p sub70n03-09p.pdf Size:113K _vishay

SUP/SUB70N03-09PVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V '70a30300.015 @ VGS = 4.5 V '55DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09Top ViewN-Channel MOSFETSUP70N03-09ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

0.6. sup70n03-09bp.pdf Size:52K _vishay

SUP/SUB70N03-09BPNew ProductVishay SiliconixN-Channel 30-V (D-S), 175_C, MOSFET PWM OptimizedPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.009 @ VGS = 10 V 70a300.013 @ VGS = 4.5 V 60DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB70N03-09BPTop ViewN-Channel MOSFETSUP70N03-09BPABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

0.7. ipd70n03s4l-04 ds.pdf Size:186K _infineon

IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04

0.8. ipd70n03s4l-04.pdf Size:186K _infineon

IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04

0.9. ntd70n03r-001 ntd70n03rg ntd70n03r.pdf Size:85K _onsemi

NTD70N03RPower MOSFET72 A, 25 V, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Low RDS(on) to Minimize Conduction Loss Low CISS to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge25 V 5.6 mW 72 A Pb-Free Packages are AvailableN-ChannelMAXIMUM RATINGS (TJ = 25C Unless otherwise specified)DP

0.10. ut70n03.pdf Size:146K _utc

UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

0.11. rfp70n03 rf1s70n03sm.pdf Size:142K _intersil

RFP70N03, RF1S70N03SMData Sheet July 1999 File Number 3404.470A, 30V, 0.010 Ohm, N-Channel Power FeaturesMOSFETs 70A, 30VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili

0.12. ssd70n03-04d.pdf Size:676K _secos

SSD70N03-04D 75A, 30V, RDS(ON) 6 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme

0.13. cjac70n03.pdf Size:2356K _jiangsu

Www.nch.com.au › Fastfox › FaqFrequently Asked Questions FastFox Text Expander Software - NCH

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L-D Plastic-Encapsulate MOSFETS CJAC70N03 N-Channel Power MOSFET V(BR)DSS ID RDS(on)TYPPDFN 56-8L-D 4.3m@10V30 V70A6.0m@4.5VDESCRIPTION The CJAC70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

0.14. am70n03-04d.pdf Size:302K _analog_power

Analog Power AM70N03-04DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)6 @ VGS = 10V75 Low thermal impedance 308 @ VGS = 4.5V65 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R

0.15. am70n03-08d.pdf Size:302K _analog_power

Analog Power AM70N03-08DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)8 @ VGS = 10V65 Low thermal impedance 3011.5 @ VGS = 4.5V54 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

0.16. 70n03.pdf Size:804K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 70N03 Power-TransistorProduct SummaryV 30 VDSR 8.0mDS(on),maxI 70 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedTO-251 MSL1 up to 260C peak reflow 175C operating temperature3 Green product (RoHS compliant)21 Ultra low Rds(on) 100% Avalanche testedTy

0.17. 70n03.pdf Size:2696K _goford

GOFORD70N03FeaturesPin DescriptionVDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @10V (Typ)DD DD30V4.6m 3.3m 70AGPin 1SSS Reliable and RuggedDFN5x6-8 Lower Qg and Qgd for high-speed switching(5,6,7,8) Lower RDS(ON) to Minimize Conduction LossesDDDD Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Deskto

0.18. brd70n03.pdf Size:847K _blue-rocket-elect

BRD70N03 Rev.E Dec.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. / Applications DC/

0.19. bri70n03.pdf Size:906K _blue-rocket-elect

BRI70N03(BRCS70N03I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features Super high dense cell design for low RDS(on) Rugged and reliablesurface. / Applications DC/

0.20. hfu70n03v.pdf Size:691K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. HFU70N03VN-Channel Enhancement Mode Field Effect Transistor Applications TO-251 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)

0.21. hfp70n03v.pdf Size:692K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. HFP70N03VN-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Portable Equipment. LCD Display Inverter. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 50A, 30V(See Note), RDS(on)

0.22. ndt70n03.pdf Size:1184K _kexin

SMD Type MOSFETN-Channel MOSFETNDT70N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 30V ID = 33A (VGS = 10V) RDS(ON) 4.3m (VGS = 10V)D0.127+0.10.80-0.1 RDS(ON) 6.5m (VGS = 4.5V) max+ 0.11 Gate2.3 0.60- 0.1G +0.154.60 -0.152 Drain3 SourceS Absolute Maximum Ratings

0.23. ms70n03.pdf Size:362K _bruckewell

MS70N03N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)6 @ VGS = 10V75 Low thermal impedance308 @ VGS = 4.5V65 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE

0.24. fhu70n03a fhd70n03a.pdf Size:708K _feihonltd

N N-CHANNEL MOSFET FHU70N03A/FHD70N03A MAIN CHARACTERISTICS FEATURES ID 68 A Low gate charge VDSS 30 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 7.4m Fast switching Rdson-typ @Vgs=4.5V 10.8m 100% 100% avalanche tested Day one 2 1 7 – maintain a daily journal.

0.25. rfp70n03.pdf Size:205K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor RFP70N03FEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAC-DC convertersLED lightingUninterruptible power supplyABSOLUT

Другие MOSFET.. SI2319, SI2323, SI2328, SIA519, XP151A13AO, XP152A12CO, 20N06, 60N03, 40673, 90N03, SSS10N60, SSS12N60, SSS1N60, SSS2N60, SSS5N60, SSS7N60, SSS8N60.

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